Journal
ACS APPLIED NANO MATERIALS
Volume 3, Issue 8, Pages 8104-8116Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.0c01539
Keywords
GaN nanotower; ZnO nanorods; Au-nanoparticles; heterojunction; ultraviolet photodetector
Funding
- DST [DST/TM/CERI/C245 (G)/2016]
- CSIR-NPL, New Delhi
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Vertically aligned GaN nanotowers (NTs) were grown on the Si (111) substrate by plasma-assisted molecular beam epitaxy to design a highly responsive ultraviolet (UV) photodetector. The UV detector fabricated on a bare GaN-NT array yielded highly sensitive and repeatable device characteristics attributed by high responsivity (R), low noise equivalent power (NEP), and a high external quantum efficiency (EQE) of 484.77 A/W, 1.76 x 10(-13) W.Hz(-1/2), and 1.85 X 10(5) %, respectively. Furthermore, the developed UV photodetector demonstrated fast response with excellent stability when functionalized with Au nanoparticles and ZnO nanorods. This hybridized GaN-NT-based device with ZnO nanorods and Au nanoparticles significantly accelerated the performance of the device where a prominent threeorder reduction under dark current is observed along with gigantic R, lower NEP, and an extremely enhanced EQE of 7042 A/W, 1.84 X 10(-14) W.Hz(-1/2), and 2.7 X 10(6)%, respectively. The mechanism elaborating the enhanced device performance with a localized surface plasmon effect has been discussed through an energy band diagram. The fabricated highly sensitive device can lead the path toward future optoelectronic applications of integrated III-nitride technology.
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