Journal
ACS MATERIALS LETTERS
Volume 2, Issue 9, Pages 1101-1105Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsmaterialslett.0c00227
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Funding
- National Natural Science Foundation of China [61925402, 61851402, 61734003]
- Science and Technology Commission of Shanghai Municipality [19JC1416600]
- National Key Research and Development Program [2017YFB0405600]
- Shanghai Education Development Foundation
- Shanghai Municipal Education Commission Shuguang Program [18SG01]
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With a rapid increase in artificial intelligence applications, massive data need to be processed in parallel and the performance of memories becomes the key factor that limits the efficiency of the whole system. High-performance memories that match the high-speed computing cell is needed, and architecture innovation is also urgent to solve the data transfer bottleneck of von Neumann architecture. Constructed by layered two-dimensional (2D) materials, van der Waals (vdW) heterostructures can be easily stacked and own diverse physical properties and band structures that provide a large space for the memory devices design. In this Perspective, we offer a perspective on the field of vdW heterostructures memory devices, including the device performance enhancement, the mechanism innovation, and the rich application scenarios.
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