Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 22, Issue 36, Pages 20704-20711Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0cp03434g
Keywords
-
Funding
- Higher Education Commission of Pakistan [5727/KPK/NRPU/RD/HEC2016]
- Vietnam National Foundation for Science and Technology Development (NAFOSTED) [103.01-2019.05]
Ask authors/readers for more resources
The geometric structure, electronic, optical and photocatalytic properties of MSSe-g-GaN (M = Mo, W) van der Waals (vdW) heterostructures are investigated by performing first-principles calculations. We find that the MoSSe-g-GaN heterostructure exhibits type-II band alignment for all stacking patterns. While the WSSe-g-GaN heterostructure forms the type-II or type-I band alignment for the stacking model-I or model II, respectively. The average electrostatic potential shows that the potential of g-GaN is deeper than the MSSe monolayer, leading to the formation of an electrostatic field across the interface, causing the transfer of photogenerated electrons and holes. Efficient interfacial formation of interface and charge transfer reduce the work function of MSSe-g-GaN vdW heterostructures as compared to the constituent monolayer. The difference in the carrier mobility for electrons and holes suggests that these heterostructures could be utilized for hole/electron separation. Absorption spectra demonstrate that strong absorption from infrared to visible light in these vdW heterostructures can be achieved. Appropriate valence and conduction band edge positions with standard redox potentials provide enough force to drive the photogenerated electrons and holes to dissociate water into H+/H(2)and O-2/H2O at pH = 0.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available