CAN THE METALS REPLACE SEMICONDUCTORS IN A NOTHING ON INSULATOR NANOTRANSISTOR?

Very soon the CMOS technology reaches its physical limit. In the next decade, the CMOS success will continue by co-integration with other nanodevices, accordingly to the Electron Device Society estimations. The vacuum nano-transistors represent a promising solution. The Nothing On Insulator transistor belongs to these devices class of international interest. The paper has the goal to establishes if metals can replace semiconductors for the Nothing On Insulator (NOI) devices. The work is based on simulations and comparisons with other similar fabricated devices that cited our previous work. Due to the well-known electrons emission from metals in vacuum it is expected to efficiently replace the semiconductors by metals. The deposition of tens nanometer of metal as source/drain islands onto a thin oxide would be a simpler and cheaper technology to fabricate NOI nano-devices. The actual analysis is based on an extremely precise model, available as quantum tunneling through the Metal-Insulator-Metal (MIM) ultra-thin structures, activated by MIMTUN function in simulator and measured in MIM structures by other authors. The ID-VDS characteristics allow the NOI device with metals to generate pure exponential functions in some applications. The second class of characteristics, ID-VGS seem to offer a constant slope and a poor gate modulation. But, this constant slope is an excellent hint to provide constant resistances at given V-GS, ranging from 5kohm to 5Gohm, for a resistor size of tens nanometer. This is excellent for the CMOS transistors co-integration with so tiny resistors in nanoscale electronics.