Journal
PHYSICAL REVIEW B
Volume 102, Issue 14, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.102.140101
Keywords
-
Funding
- National Natural Science Foundation of China [52032001, 51671126, 11674077]
- Fundamental Research Funds for the Central Universities [2232019A3-13, 2232018D3-32]
- Shenzhen Peacock Plan [KQTD2016053019134356]
- Guangdong Innovative & Entrepreneurial Research Team Program [2016ZT06C279, 2017ZT07C062]
- Key Research Platforms and Projects of Universities in Guangdong Province [2018KZDXM062]
- Shenzhen Development and Reform Commission Foundation for Shenzhen Engineering Research Center for Frontier Materials Synthesis at High Pressure
- US NSF [DMR-1506669, DMREF-1626967]
- Research Platform for Crystal Growth & Thin-Film Preparation at SUSTech
- Shenzhen PengchengScholarship Program
Ask authors/readers for more resources
We report two reversible pressure-induced isosymmetric phase transitions in a-Ag 2 S that are accompanied by two compressive anomalies at 7.5 and 16 GPa, respectively. The first transition arises from a sudden and drastic puckering of the wrinkled Ag-S layers, which leads to an anomalous structural softening at high pressure and gives rise to the ultrahigh compressive ductility in alpha-Ag2S. The second transition stems from a pressure-driven electronic state crossover from a conventional semiconductor to a topological metal. The band-crossing points near the Fermi energy form a nodal-line structure due to the preservation of the time-reversal and space-inversion symmetries under pressure. Our findings not only reveal the underlying mechanism responsible for the ultrahigh ductility in this class of inorganic semiconductors, but also provide a distinctive member to the growing family of topological metals and semimetals.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available