Journal
CURRENT APPLIED PHYSICS
Volume 15, Issue -, Pages S7-S10Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2015.04.018
Keywords
InGaN/GaN LEDs; Efficiency droop; Electron blocking layer (EEL); External quantum efficiency (EQE); Current injection efficiency (CIE)
Funding
- Ministry of Knowledge Economy (MKE, Korea) [10041878]
- Development of WPE 75% LED Device Process and Standard Evaluation Technology - Basic Science Research Program through National Research Foundation of Korea (NRF) [2014R1A-1A4A01008252]
- Ministry of Education [2014R1A1A4A01008252]
- Industrial Strategic Technology Development Program [10041878]
- National Research Foundation of Korea [2014R1A1A4A01008252] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The effect of electron blocking layer (EBL) on the injection and radiative efficiencies in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) was investigated. In order to identify the dominant mechanism, we measured the external quantum efficiency (EQE), radiative efficiency (RE) and carrier injection efficiency (CIE) experimentally. Through these methods, the origin of efficiency droop and the effect of the EBL were clarified. In addition, the RE and the CIE can be separated quantitatively through our analysis. The insertion of the EBL does reduce the carrier leakage but the RE is also reduced by the insertion, which results in not a significant change in the EQE. The measured piezoelectric field of the QWs significantly increased by the insertion of the EBL, which implies that the insertion of AlGaN layer make a strong effect on the QW strain. (C) 2015 Elsevier B.V. All rights reserved.
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