Journal
PHYSICS LETTERS A
Volume 384, Issue 33, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.physleta.2020.126829
Keywords
Heterostructure; Blue phosphorus; First-principles
Categories
Funding
- National Natural Science Foundation of China [11947105, 11904041, 11747146]
- Natural Science Foundation of Chongqing [cstc2019jcyjm-sxmX0237, cstc2018jcyjA2923]
- Science and Technology Research Project of Chongqing Education Committee [KJQN201800501, KJ1703042, KJ1600319]
- State Key Laboratory of Luminescence and Applications [SKLA-2020-10]
- Basic Research and Frontier Exploration Project of Chongqing Municipality [cstc2018jcyjAX0820]
- Dr. Scientific Research Fund of Chongqing Normal University [17XLB012, 20XlB002]
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In this work, we composite blue phosphorous (blueP) and monolayer GeS/SnS/SnSe through van der Waals (vdW) force interaction. It is found that blueP-GeS/SnS heterostructures are stable and form type-II band alignments, which can effectively promote the separation of photoinduced carriers. We perform a systematic theoretical study of interlayer coupling effects and band realignment of blueP-GeS/SnS/SnSe heterostructures after the strain and electric-field are imposed. BlueP and GeS/SnS/SnSe are twisted with different angles, and the theoretical framework of bands alignment and carriers' separation are established. The results show that the electronic properties of independent blueP and GeS/SnS/SnSe can be roughly maintained. When strain is applied, the band alignment shows significant adjustability by changing the external strain. Besides, the blueP-SnSe heterostructure show type-II characteristic in the range from -0.25 V/angstrom to -0.1 V/angstrom. Our theoretical calculation proves that strain and electric field engineering are two useful methods to design novel electronic devices. (C) 2020 Elsevier B.V. All rights reserved.
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