4.4 Article

Ferroelectric domain structures and polarization switching characteristics of polycrystalline BiFeO3 thin films on glass substrates

Journal

CURRENT APPLIED PHYSICS
Volume 15, Issue 5, Pages 584-587

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2015.02.012

Keywords

Ferroelectric thin film; BiFeO3; Glass substrate; Ferroelectric domain structure

Funding

  1. Korea Research Foundation Grant [2012R1A2A2A01046451]
  2. National Research Foundation of Korea [2012R1A2A2A01046451] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We investigated ferroelectric characteristics of BiFeO3 (BFO) thin films on SrRuO3 (SRO)/yttria-stabilized zirconia (YSZ)/glass substrates grown by pulsed laser deposition. YSZ buffer layers were employed to grow highly crystallized BFO thin films as well as SRO bottom electrodes on glass substrates. The BFO thin films exhibited good ferroelectric properties with a remanent polarization of 2P(r) = 59.6 mu C/cm(2) and fast switching behavior within about 125 ns. Piezoelectric force microscopy (PFM) study revealed that the BFO thin films have much smaller mosaic ferroelectric domain patterns than epitaxial BFO thin films on Nb:SrTiO3 substrates. Presumably these small domain widths which originated from smaller domain energy give rise to the faster electrical switching behavior in comparison with the epitaxial BFO thin films on Nb:SrTiO3 substrates. (C) 2015 Elsevier B.V. All rights reserved.

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