Journal
DIAMOND AND RELATED MATERIALS
Volume 109, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2020.108026
Keywords
CVD diamond; Schottky diode; ZnO layer; Electron transport layer; Alpha-voltaic battery
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Funding
- National Science Fund for Distinguished Young Scholars [51625201]
- National Key Research and Development Program of China [2016YFE0201600]
- National Natural Science Foundation of China [51702066]
- Key Laboratory of Micro-systems and Microstructures Manufacturing, Ministry of Education, Harbin Institute of Technology [2016KM001]
- Major State Basic Search Program [2014CB46505]
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Improving open-circuit voltage is critical to improving the performance of diamond nuclear battery. ZnO films have been successfully used as the electron transport layer of diamond Schottky nuclear battery in this work. The open-circuit voltage of device with ZnO layer is increased from 1.03 to 1.43 V and the conversion efficiency is increased by 100% to 1.42% compared with device without ZnO layer. By comparing the device structure diagram and potential distribution before and after adding the ZnO layer, we try to find out the cause of the increase in open-circuit voltage. This research provides a new way to improve the open-circuit voltage and conversion efficiency of nuclear batteries.
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