Journal
PHYSICAL REVIEW B
Volume 102, Issue 16, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.102.165423
Keywords
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Funding
- Deutsche Forschungsgemeinschaft [409810106]
- Russian Foundation for Basic Research [19-52-12001, 19-02-00098]
- Act 211 of the Government of the Russian Federation [02.A03.21.0006]
- Government of the Russian Federation [0306-2019-0015]
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The dynamics of exciton recombination and spin relaxation in thin (Ga,Al)(Sb,As)/AlAs quantum wells (QWs) with indirect band gap are studied. The band alignment in these QWs is identified as type I. The exciton recombination time exceeds hundreds of microseconds, while the spin relaxation times of the electron and the heavy hole in an exciton do not exceed hundreds of nanoseconds. The heavy-hole longitudinal g factor is determined to be +2.5. Despite the long exciton lifetimes, the photoluminescence circular polarization degree induced by a magnetic field is unexpectedly small and does not exceed 25%.
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