ZnO-based nanowires grown by mist chemical vapor deposition on GaN layer using thin Au layer

ZnO and MgZnO nanowires were grown by mist chemical vapor deposition at a high growth temperature of approximately 950 degrees C-960 degrees C on a c-plane GaN layer sputtered with a thin Au layer with a designed thickness of 3 nm. The longitudinal axis growth of the ZnO nanowires was strongly enhanced, and some of the nanowires grown for 30 min were longer than 6 mu m. Photoluminescence UV peaks were clearly observed from the area where ZnO-based nanowires were grown, and it is believed that the nanowires have high-quality crystallinity.