Journal
ADVANCED ELECTRONIC MATERIALS
Volume 6, Issue 12, Pages -Publisher
WILEY
DOI: 10.1002/aelm.202000760
Keywords
2D materials; CuInP; S-2; (6); electronic synapses; ferroelectric diodes
Funding
- A*STAR Science and Engineering Research Council [A2083c0061]
- National Research Foundation, Singapore [NRF-CRP22-2019-0007]
- Ministry of Education, Singapore
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Memristors with biological synaptic behaviors and functions have been intensively studied as an important component for neuromorphic computing system, which hold promise to address the power consumption issue in modern computers based on von Neumann architecture. However, the resistive switching mechanism that relies on the stochastic formation of conductive filaments leads to poor cycle-to-cycle (temporal) and cell-to-cell (spatial) variations for filamentary memristors. The emergence of memristors based on 2D ferroelectric materials can potentially avoid these issues. Here, a vertical Au/CuInP2S6 (CIPS)/Ti diode is demonstrated using exfoliated ferroelectric CIPS flake. Through ferroelectric switching, the CIPS diode realizes resistive switching with a ratio larger than 6 x 10(3). The endurance measurement shows a small set and reset voltage variation of 5.3% and 9.1%, respectively. Key synaptic behaviors including spike-time-dependent plasticity, paired-pulse-facilitation, and paired-pulse-depression are successfully mimicked, manifesting the potential application of CIPS diode in a neuromorphic computing system. Moreover, pattern learning and memory behaviors are emulated using a 3 x 3 CIPS crossbar array.
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