Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 2, Issue 10, Pages 3221-3232Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.0c00560
Keywords
ferroelectric HfO2; ferroelectric oxides; Hf0.5Zr0.5O2; epitaxial HfO2; epitaxial oxides on silicon
Funding
- Spanish Ministerio de Ciencia e Innovacion [SEV-2015-0496, MAT2017-85232-R, PID2019-107727RB-I00, MAT2015-73839-JIN]
- Generalitat de Catalunya [2017 SGR 1377]
- Ramon y Cajal contract [RYC-2017-22531]
- China Scholarship Council (CSC) [201807000104]
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Doping ferroelectric Hf0.5Zr0.5O2 with La is a promising route to improve endurance. However, the beneficial effect of La on the endurance of polycrystalline films may be accompanied by degradation of retention. We have investigated the endurance-retention dilemma in La-doped epitaxial films. Compared to undoped epitaxial films, large values of polarization are obtained in a wider thickness range, whereas the coercive fields are similar, and the leakage current is substantially reduced. Compared to polycrystalline La-doped films, epitaxial La-doped films show more fatigue, but there is no significant wake-up effect and endurance-retention dilemma. The persistent wake-up effect, common to polycrystalline La-doped Hf0.5Zr0.5O2 films, is limited to a few cycles in epitaxial films. Despite fatigue, endurance in epitaxial La-doped films is more than 10(10) cycles, and this good property is accompanied by excellent retention of more than 10 years. These results demonstrate that the wake-up effect and endurance-retention dilemma are not intrinsic in La-doped Hf0.5Zr0.5O2.
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