Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 8, Issue -, Pages 1138-1144Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2020.3020186
Keywords
High electron mobility transistor (HEMT); gallium nitride (GaN); strain engineering
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Funding
- Key-Area Research and Development Program of Guangdong Province [2019B010128001, 2019B010142001]
- Shenzhen Municipal Council of Science and Innovation [JCYJ20180305180619573, JCYJ20170412153356899]
- National Natural Science Foundation of China [61704004]
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Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices' on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two-dimensional electron gas (2DEG) density. The devices feature a 0.1 mu m gate length, SiNx stress liner, and comb gate. SiNx liner can provide significant stress to AlGaN/GaN heterostructure in the scaled gate region. The additional stress translates to the additional electric field and depletes the 2DEG in the gate region. As a result, the quasi-normally-off operation is achieved. Furthermore, the comb gate structure is introduced to suppress the short channel effects, supported by TCAD simulation. The quasi-normally-off devices' excellent on-state performances are benchmarked against the normally-off devices reported recently and a p-GaN HEMT purchased from a commercial foundry. The results support strain engineering as a promising technique to pursue the normally-off operation of GaN HEMTs.
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