4.6 Article

Mott localization in the van der Waals crystal CrI3: A GGA+DMFT study

Journal

PHYSICAL REVIEW B
Volume 102, Issue 19, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.102.195130

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Funding

  1. CNPq [304035/2017-3]
  2. Advanced Light Source, a U.S. DOE Office of Science User Facility [DE-AC02-05CH11231]
  3. State of Texas through the Texas Center for Superconductivity at the University of Houston

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Using the generalized gradient approximation plus dynamical mean-field theory (GGA+DMFT) we confirm the importance of multi-orbital dynamical correlations in determining the paramagnetic insulating state of CrI3. While the ferromagnetic phase reveals weak electronic correlation effects due to strong spin-orbital polarization, the Mott insulating state of paramagnetic CrI3 crystal is shown to be driven by the interplay between orbital-dependent one-electron lineshape and multi-orbital electronic interactions. To probe the paramagnetic Mott insulating state we performed x-ray absorption spectroscopy (XAS) measurements for the two structural phases of CrI3. Our study is relevant to understanding the orbital-selective electronic structure reconstruction of Mott insulators and should be applicable to other van der Waals bonded materials from bulk to the ultrathin limit.

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