Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 31, Issue 24, Pages 22699-22712Publisher
SPRINGER
DOI: 10.1007/s10854-020-04795-5
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This present work is an extensive effort to report the key role of indispensable technical challenges in the sensing performance of an embedded nanogap SiGe source dielectric-modulated tunnel field effect transistor (SGS-DM-TFET) biosensor during the conjugation of biological samples for the first time. In order to reach high and brilliant insights into the different design considerations impacting on the sensing performance of the biosensor under the study, two key issues in terms of process-related issue and real-time-related issues covering biomolecules manners in the nanogap cavity of the biosensor have been comprehensively studied through extensive numerical simulation. Investigations in this work revealed that the SGS-DM-TFET biosensor must be truly configured for working in realistic conditions. The obtained results give us a useful guideline for sensing the biomolecules samples in the real conditions including low coverage percentage of biological samples, charge effect, and discrete probe position with the help of SGS-DM-TFET biosensor while keeping the high sensitivity.
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