4.3 Article

Electronic structure of the high-mobility two-dimensional antiferromagnetic metal GdTe3

Journal

PHYSICAL REVIEW MATERIALS
Volume 4, Issue 11, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.4.114005

Keywords

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Funding

  1. National Key R&D Program of the MOST of China [2016YFA0300204]
  2. National Natural Science Foundation of China [11404360, 11874264, 11574337, 11227902]
  3. Natural Science Foundation of Shanghai [14ZR1447600]
  4. ShanghaiTech University
  5. Analytical Instrumentation Center, SPST, ShanghaiTech University [SPST-AIC10112914]
  6. Award for Outstanding Member in Youth Innovation Promotion Association CAS

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The newfound two-dimensional antiferromagnetic GdTe3 has great potential in novel magnetic twistronic and spintronic devices because it has the highest carrier mobility among all known layered magnetic materials. Here, we used high-resolution angle-resolved photoemission spectroscopy to investigate its Fermi-surface topology and low-lying electronic band structure. The Fermi surface is partially gapped by charge-density waves below the transition temperature. Very steep and nearly linear band dispersion near the Fermi energy contributes to the high carrier mobility in GdTe3. We find that the scattering rate of the quasiparticle increases linearly as a function of binding energy within a wide energy range, indicating that GdTe3 is a non-Fermi-liquid metal. Our results in this paper provide a fundamental understanding of this layered antiferromagnetic material to guide future studies on it.

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