Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 64, Issue 1, Pages 415-420Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2016.2616921
Keywords
Current-voltage characteristics; ion radiation effects; modeling; power semiconductor devices; Schottky diodes; silicon carbide
Funding
- Walter Ahlstrom Foundation through the Tutkijat Maailmalle program
- European Space Agency (ESA/ESTEC) [4000111630/14/NL/PA]
- Academy of Finland under the Finnish Centre of Excellence Programme [2513553]
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Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.
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