Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 64, Issue 1, Pages 285-292Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2016.2634538
Keywords
FinFET; leakage current; threshold voltage shift; total ionizing dose
Funding
- Sandia's Laboratory-Directed Research and Development program
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC0494AL85000]
- Defense Threat Reduction Agency (DTRA) [HDTRA1-13-C-0063]
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Total ionizing dose results are provided, showing the effects of different threshold adjust implant processes and irradiation bias conditions of 14-nm FinFETs. Minimal radiation-induced threshold voltage shift across a variety of transistor types is observed. Off-state leakage current of nMOSFET transistors exhibits a strong gate bias dependence, indicating electrostatic gate control of the sub-fin region and the corresponding parasitic conduction path are the largest concern for radiation hardness in FinFET technology. The high-V-th transistors exhibit the best irradiation performance across all bias conditions, showing a reasonably small change in off-state leakage current and V-th, while the low-V-th transistors exhibit a larger change in off-state leakage current. The worst-case bias condition during irradiation for both pull-down and pass-gate nMOSFETs in static random access memory is determined to be the on-state (V-gs = V-dd). We find the nMOSFET pull-down and pass-gate transistors of the SRAM bit-cell show less radiation-induced degradation due to transistor geometry and channel doping differences than the low-V-th transistor. Near-threshold operation is presented as a methodology for reducing radiation-induced increases in off-state device leakage current. In a 14-nm FinFET technology, the modeling indicates devices with high channel stop doping show the most robust response to TID allowing stable operation of ring oscillators and the SRAM bit-cell with minimal shift in critical operating characteristics.
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