Gate Swing Improving for the Nothing on Insulator Transistor in Weak Tunneling

One of the most controversial parameter of the nothing on insulator (NOI) transistor was the subthreshold gate swing-SS. Therefore, the main purpose of this paper is to considerably improve the swing value by simulations from the previously reported 1.2 V/dec to 200 mV/dec. The first condition is to operate the NOI transistor in weak tunneling. The second strategy is to change the NOI structure: the bottom oxide thinning, the doping profile optimization, and the source geometry changing. In addition to the SS decreasing, other parameters for digital applications are improved: I-ON/I-OFF ratio increases to 10(11), threshold voltage decreases in inversion to -1 V and the switch time under the gate command reaches to 10 ps.