Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 16, Issue 3, Pages 502-506Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2017.2693691
Keywords
Black silicon; femtosecond laser; gold; hyperdoping; infrared absorption
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Funding
- National Natural Science Foundation of China (NSFC) [61235004, 61307119, 61590930, 61377048, 61378053]
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Gold (Au)-doped-textured silicon (Si) material with a thermostable absorption below bandgap (>50%) is obtained by femtosecond laser irradiation. Although the concentration of Au impurity (1019 cm(-3)) in textured Si is at least four orders of magnitude greater than the solid solubility of Au in crystalline Si, the sheet carrier density (approximately 1010 cm(-2)) in Au-doped Si is very low due to a self-compensation effect of Au impurity in Si material. The infrared absorption of Au-doped Si is related to laser-induced-structural defects and sub-band absorption of deep energy levels of Au in Si, which is determined by temperature-dependent Hall Effect measurement. Besides supersaturated doping of Au, a gold silicide phase is formed at textured Si surface.
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