Journal
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 16, Issue 3, Pages 411-416Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNANO.2017.2675939
Keywords
Analog applications; bilayer graphene nanoribbon; cutoff frequency; digital applications; intrinsic gain; NEGF; ON/ OFF current ratio; tunnel FET
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Funding
- Department of Electronics and Information Technology, Government of India [5(9)/2012-NANO (Vol. II)]
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The recent advancement in the fabrication of narrow graphene nanoribbon with smooth edges has catalyzed the growth of nanoribbon based transistors. Motivated by these advances, we suggest bilayer graphene nanoribbon tunnel field-effect transistors (BLGNR-TFETs) for low voltage digital and analog applications. The device performance is analyzed by quantum transport simulation, based on self-consistent solutions of two-dimensional Poisson's equation and nonequilibrium Green's function formalism. The results indicate that the use of BLGNR-TFET instead of monolayer graphene nanoribbon TFET with very narrow width, increases the ON current and reduces the intrinsic device delay without lowering the ON/OFF current ratio. The BLGNR-TFET for analog/RF applications has provided higher intrinsic gain at very narrow ribbon width; however, very narrow width reduces the cutoff frequency. Furthermore, RF figure of merits are investigated in the presence of external parasitics.
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