Journal
ACS APPLIED NANO MATERIALS
Volume 3, Issue 10, Pages 10411-10417Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.0c02302
Keywords
MoTe2; large-scale; chemical assembly; 1T'/2H heterophase; contact resistance
Funding
- Beijing Natural Science Foundation [4182028]
- Key Research Program of Frontier Sciences, CAS [ZDBS-LY-JSC015]
- National Key R&D Program of China [2018YFA0306900]
- National Natural Science Foundation of China [6152004]
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Because of atomic thickness and non-zero band gap, two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have become promising candidates for post-silicon nanoelectronic materials. In the process of realizing 2D electronic devices for scaling down modern integrated circuitry, contact engineering suitable for large-scale manufacturing is crucial, but it remains elusive. Here, we demonstrated the large-scale chemical assembly of van der Waals heterostructures, with metallic 1T'-MoTe2 on top of semiconducting 2H-MoTe2, via a spatial-controlled phaseengineered growth method. Based on the heterophase structure, a large-scale field-effect transistor (FET) array was fabricated, in which 1T'-MoTe2 was used as the contact electrode and 2H-MoTe2 was used as the semiconducting channel. The vertical nanosheet-based heterophase FET exhibits ohmic contact behavior with distinctively low contact resistance. A total of 120 FETs were measured, and the measured average field-effect mobility was as high as 15 cm(2) V-1 s(-1) (comparable to that of exfoliated single-crystalline 2H-MoTe2). The superior electrical properties are attributed to the atomic clean interface that leads to an ideal contact between top 1T'- and bottom 2H-MoTe2. This spatially controlled large-scale chemical assembly of vertical 2D metalsemiconductor heterostructures with low contact resistance provides a new route toward the practical application of highperformance electronic and optoelectronic devices based on the atomically thin TMDCs.
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