Journal
JOURNAL OF POWER SOURCES
Volume 477, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.jpowsour.2020.228768
Keywords
Thermoelectric performance; Half-heusler alloys; Hf-Ti dual-doping; Disorder scattering parameters; Phonon scattering; Lattice thermal conductivity
Funding
- Ministry of Science and Higher Education of the Russian Federation of NUST MISiS [K3-2017-061, N 211]
- Russian Foundation for Basic Research [18-38-20170]
- Act 211 Government of the Russian Federation [02. A03.21.0011]
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FeVSb-based half-Heusler (HH) compound has recently been identified as promising medium-high temperature thermoelectric (TE) materials for power generation applications. In this study, enhanced thermoelectric performance of Fe(V0.8Hf0.2)(1-x)TixSb (x = 0.0, 0.2, 0.4, 0.5, 0.6) HH alloys by Hf-Ti dual-doping was reported studied in a temperature range from 100 to 900 K. A high content of Ti doping not only optimized the carrier concentration but also reduced the lattice thermal conductivity, which all contribute to high zT. As a result, a zT value was increased by -20% at 873 K for Fe(V0.8Hf0.2)(0.8)Ti0.2Sb compound. Hf-Ti dual doping significantly reduced the lattice thermal conductivity due to enhanced point defect scattering which is mainly attributed to mass fluctuations. Hence, suppressed the material's total thermal conductivity. A reduction of similar to 20% was obtained for the Fe(V0.8Hf0.2)(0.8)Ti0.2Sb sample, compared with the single Hf-doped FeVSb sample and of similar to 80% compared to FeVSb at room temperature.
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