Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 11, Pages 5216-5220Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3022814
Keywords
Configurable Schottky barrier; indiumgallium-zinc-oxide (IGZO) neuromorphic thin-film transistors; (TFTs); spiking dynamic computing
Funding
- National Natural Science Foundation of China [11674162, 61921005, 61834001]
- National Key Research and Development Program of China [2018YFA0305800, 2019YFB2205400]
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Capacitively coupled neuromorphic system is very promising for spiking dynamic computing because of the inherent advantages of low static power and large fan-out. Here, flexiblemultigate indium-gallium-zinc-oxide (IGZO) Schottky thin-film transistors (TFTs) with configurable neuromorphic functions are investigated. The channel layer can be effectively modulated by the multigate terminals throughelectric-double-layercoupling effect. Plastic modulation of Schottky barrier is also demonstrated, which is highly desirable for dynamic synaptic weight modulation. Furthermore, configurable spiking dynamic functions, such as paired-pulse facilitation (PPF) and high-frequency spike filter, are also emulated in such flexible oxide-based Schottky neuromorphic device.
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