Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 11, Pages 4602-4605Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3025983
Keywords
Dynamic effects; gallium nitride; hard switching (HSW); hot electrons (HEs); hydrodynamic (HD) simulations; semi-ON
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An analysis of hot-electron (HE) effects on the dynamic resistance (dR(ON)) of AlGaN/GaN high-electron-mobility transistors(HEMTs) when subject to semi-ON stress is reported and compared with OFF-state stress. This is carried out using measurements and TCAD 2-D hydrodynamic simulations. Two structures with different distances between the highly carbon-doped buffer region and the two-dimensional electron gas (2DEG) are here considered. The additional dR(ON) in semi- ON is attributed to HEs trapping at the passivation/AlGaN interface. TCAD simulations are performed and compared with experimental results.
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