Journal
SCIENTIFIC REPORTS
Volume 10, Issue 1, Pages -Publisher
NATURE RESEARCH
DOI: 10.1038/s41598-020-76430-6
Keywords
-
Categories
Funding
- JST A-STEP, Japan [AS3015040S]
Ask authors/readers for more resources
Plasma-assisted polishing (PAP) as a damage-free and highly efficient polishing technique has been widely applied to difficult-to-machine wide-gap semiconductor materials such as 4H-SiC (0001) and GaN (0001). In this study, a 20-mm square large mosaic single crystal diamond (SCD) substrate synthesized by microwave plasma chemical vapor deposition (CVD) was polished by PAP. Argon-based plasma containing oxygen was used in PAP to modify the surface of quartz glass polishing plate, and a high material removal rate (MRR) of 13.3 mu m/h was obtained. The flatness of SCD polished by PAP measured by an interferometer was 0.5 mu m. The surface roughness measured by both scanning white light interferometer (SWLI) (84-mu m square) and atomic force microscope (AFM) (5-mu m square) was less than 0.5 nm Sq. The micro-Raman spectroscopy measurement results of mosaic SCD substrate processed by PAP showed that residual stress and non-diamond components on the surface after PAP processing were below the detection limit.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available