Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 67, Issue 11, Pages 2392-2395Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2020.2970743
Keywords
Electric fields; Degradation; Microelectronics; Length measurement; Doping; Total ionizing dose; Breakdown voltage; drift region length; silicon-on-insulator (SOI) laterally diffused metal oxide semiconductor field-effect transistors (LDMOSFETs); technology computer-aided design (TCAD) simulation; total dose
Funding
- National Natural Science Foundation of China [11690045, 61674015, 61771167, 61704039]
- Natural Science Foundation of Guangdong Province [2016A030311022]
- Open Fund of Robot Technology Used for Special Environment Key Laboratory of Sichuan Province
- China Scholarship Council
- University of Texas at Austin
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Recently, Shu et al. published Numerical and Experimental Investigation of TID Radiation Effect on the Breakdown Voltage of 400 V SOI NLDMOS. This short article is an extension of that earlier article. The breakdown voltage of 400-V silicon-on-insulator n-channel laterally diffused metal-oxide semiconductor field-effect transistors with different drift region lengths are examined after exposure to total ionizing dose. The variation observed is analyzed using technology computer-aided design simulation.
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