High-Frequency Bridgeless Rectifier Based ZVS Multiresonant Converter for Inductive Power Transfer Featuring High-Voltage GaN-HFET

This paper presents a novel zero-voltage soft-switching bridgeless active rectifier based multiresonant dc-dc power converter with high breakdown voltage gallium nitride heterojunction-field-effect transistor for inductive power transfer (IPT) systems. The excellent performances such as high efficiency, low switching noises, and normally-off operation are originally demonstrated in experiment of a 700-W prototype by comparing with a Si superjunction-mosfet-based prototype under the fair condition of voltage and current ratings. It is revealed from the experiment that the low resistance and high-speed operation of the GaN power transistor is effective for improving the power and energy conversions in IPT systems.