Journal
EPJ PHOTOVOLTAICS
Volume 11, Issue -, Pages -Publisher
EDP SCIENCES S A
DOI: 10.1051/epjpv/2020007
Keywords
Solar cells; ultra-thin films; copper indium gallium selenide; surface passivation layer; hafnium oxide
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Funding
- European Union's H2020 research and innovation program [715027]
- European Research Council (ERC) [715027] Funding Source: European Research Council (ERC)
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In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized by spin-coating potassium fluoride prior to absorber layer growth. Contacts are formed during absorber layer growth and visualized with scanning electron microscopy (SEM). To assess the passivating qualities, HfOx was applied in a metal-insulator-semiconductor (MIS) structure, and it demonstrates a low interface trap density in combination with a negative density of charges. Since we used ultra-thin devices that are ideal to probe improvements at the rear, solar cell results indicated improvements in all cell parameters by the addition of 2 nm thick HfOx passivation layer with contact openings.
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