GaN-based high-periodicity multiple quantum well solar cells: Degradation under optical and electrical stress

We investigate the degradation of InGaN-GaN MQW solar cells under optical and electrical stress. We submitted the devices to high temperature, high optical power stress and we found that, under optical stress, the devices show a moderate decrease in open-circuit voltage, possibly due to creation of defect-related shunt paths. This degradation is partially recovered after room temperature storage. The stronger decrease of open-circuit voltage under electrical stress at high current suggests a role of carrier flow in the degradation.