Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 11, Pages 4752-4758Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2755507
Keywords
Ambipolarity; band-to-band tunneling (BTBT); tunnel field-effect transistor (TFET)
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To suppress the ambipolar behavior and improve RF performance in tunnel field-effect transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more scalable than other vertical band-to-band-based TFETs and provides higher ON-state current (I-ON), larger ON/OFF current ratio (I-ON/I-OFF) and lower subthreshold swing compared to conventional TFETs. These advantages stem from the tunneling junction in the ZS-TFET being perpendicular to the channel direction, which facilitates the formation of a relatively large tunneling junction area. The ZS body makes use of both vertical and horizontal fields while suppressing the lateral parasitic tunneling current. In addition, by using a ZS gate in the proposed device, the energy band diagram near the source is modulated to create an N+ source pocket which creates a downward band bending of the potential, similar to PNPN-like structures. Finally, the proposed structure significantly improves the analog/RF figure-of-merit.
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