Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 3, Pages 909-915Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2646907
Keywords
Ballistic transport; pulsed IV measurement; self-heating effect (SHE); Si FinFETs
Funding
- National Natural Science Foundation of China [61376097, 61504120]
- Zhejiang Provincial Natural Science Foundation of China [LR14F040001]
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In this paper, we investigate the carrier transport characteristics of the ultrascaled Si FinFETs. Traditional dc characterization technique is compared with the ultrafast pulsed IV method. Due to the severe self-heating effect introduced in the characterization process, the ballistic transport parameters extracted using dc method would show essential discrepancies from those in the real high-speed IC circuits. Therefore, an ultrafast pulsed IV measurement technique is proposed for accurate ballistic transport characterization. Furthermore, since the series resistance (RSD) of the Si FinFETs is temperature-dependent, a modified backscattering model is adopted to extract the ballistic transport parameters without the influence of the temperature-variantRSD. A ballisticity scaling model was established to predict the scalability of the ballistic transport parameters. It is found that very high ballisticity could be achieved for FinFETs with sub-10-nm technology nodes.
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