Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 9, Pages 3602-3608Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2723932
Keywords
AlGaN/GaN; AlInN/GaN; gate leakage mechanisms; metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs); modeling of gate leakage current
Funding
- Department of Science and Technology
- Department of Information Technology, Government of India
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Gate leakage mechanisms in AlInN/GaN and AlGaN/GaN metal insulator semiconductor high-electron-mobility transistors (MIS-HEMTs) with SiNx as gate dielectric have been investigated. It is found that the conduction in the reverse gate bias is due to Poole-Frenkel emission for both MIS-HEMTs. The dominant conduction mechanism in low to medium forward bias is trap-assisted tunneling while it is Fowler-Nordheim tunneling at high forward bias. However, conduction near zero gate bias is dominated by defect-assisted tunneling for both sets of MIS-HEMTs. The gate leakage current is primarily dependent on the properties of the gate dielectric material and dielectric/semiconductor interface rather than the barrier layer. A model is proposed for the gate leakage current in GaN-based MIS-HEMTs, and the method to extract the related model parameters is also presented in this paper. The proposed gate current model matches well with the experimental results for both AlInN/GaN and AlGaN/GaN MIS-HEMTs over a wide range of gate bias and measurement temperature.
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