Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 2, Pages 638-641Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2638500
Keywords
Amorphous InGaZnO; high sensitivity; pH sensor; thin-film transistor; top-gate effect
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In this brief, we discuss our top-gate-effect- basedhigh-sensitivityamorphous InGaZnO4 thin-film transistor (a-InGaZnO TFT) pH sensor system. The pH sen-sor system consists of an a-InGaZnO TFT pH sensor and a driving circuit that was designed to bring out the high-sensitivity performance of the sensor. We present a primary demonstration for the a-InGaZnO TFT pH sensor system that has the potential for accurately detecting stepwise pH changes as small as 0.02.
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