Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 8, Pages 3044-3055Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2712761
Keywords
Charge-plasma; doping; electron-hole bilayer (EHB); metal workfunction; MOSFET; p-n junction; reconfigurable FET; Schottky barrier (SB); semiconductormetal interfaces; silicon-on-insulator (SOI); tunnel FET; ultrathin body (UTB)
Funding
- NWO Domain Applied and Engineering Sciences (TTW), The Netherlands (OTP) [13145]
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To overcome the limitations of chemical doping in nanometer-scale semiconductor devices, electrostatic doping (ED) is emerging as a broadly investigated alternative to provide regions with a high electron or hole density in a semiconductor device. In this paper, we review various reported ED approaches and related device architectures in different material systems. We highlight the role of metal and semiconductor workfunctions, energy bandgap, and applied electric field and the interplay between them for the induced ED. The effect of interface traps on the induced charge is also addressed. In addition, we discuss the performance benefits of ED devices and the major roadblocks of these approaches for potential future CMOS technology.
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