Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 11, Pages 4374-4385Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2746342
Keywords
Phase-change memory (PCM); reset energy; thermal conductivity; thermal design
Funding
- Stanford Non-Volatile Memory Technology Research Initiative at Stanford University
- MARCO
- DARPA through SONIC, one of six centers of STARnet, a Semiconductor Research Corporation Program
- National Science Foundation [DGE-4747]
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Phase-change memory (PCM) has undergone significant academic and industrial research in the last 15 years. After much development, it is now poised to enter the market as a storage-class memory (SCM), with performance and cost between that of NAND flash and DRAM. In this paper, we review the history of phase-transforming chalcogenides leading up to our current understanding of PCM as either a storage-type SCM, with high-density and better than NAND flash endurance, write speeds, and retention, or a memory-type SCM, with fast read/write times to function as a nonvolatile DRAM. Several of the key findings from the community relating to device dimensional scaling, cell design, thermal engineering, material exploration, and storing multiple levels per cell will be discussed. These areas have dramatically impacted the course of development and understanding of PCM. We will highlight the performance gains attained and the future prospects, which will help drive PCM to be as ubiquitous as NAND flash in the upcoming decade.
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