Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 6, Pages 2707-2713Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2695455
Keywords
7 nm; ballistic transport; finfet; gate-all-around; nanosheet (NSH); nanowire; scaling
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In this paper, lateral gate-all-around nano-sheet transistors (NSH-FETs) are explored from intrinsic performance to dc and ring oscillator (RO) benchmark compared with FinFETs and nanowire transistors (NW-ETs) for sub-7-nm node. The band structure calculated technology computer aided design results show comparable intrinsic performance to FinFETs at same channel cross section. On top of that, dc and RO are evaluated by taking into account electrostatics, parasitic components, and layout configurations. The NSH-FETs show an advantage in drive current with the NSH width but their RO performance is limited by the device capacitance. The multiple narrow NSH-FET shows similar to 5% higher drive current compared to the NW-FET at similar subthreshold swing, allowing heavier capacitive loaded circuit. In addition, NSH-FETs can provide the device design freedom from aggressive fin pitch scaling.
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