Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 2, Pages 521-526Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2016.2641586
Keywords
Afterpulsing; avalanche photodiode; crosstalk; cryogenics; dark noise; silicon photomultiplier (SiPM)
Funding
- National Science Foundation (U.S.) for Princeton University [PHY-1314507]
- Istituto Nazionale di Fisica Nucleare (Italy)
- Laboratori Nazionali del Gran Sasso (Italy)
- EU FP7 Project SUBLIMA [241711]
- Direct For Mathematical & Physical Scien
- Division Of Physics [1314501] Funding Source: National Science Foundation
- Division Of Physics
- Direct For Mathematical & Physical Scien [1242585] Funding Source: National Science Foundation
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We report on the characterization of near-ultraviolet high-density silicon photomultiplier (SiPM) developed at Fondazione Bruno Kessler (FBK) at cryogenic temperature. A dedicated setup was built to measure the primary dark noise and correlated noise of the SiPMs between 40 and 300 K. Moreover, an analysis program and data acquisition system were developed to allow the precise characterization of these parameters, some of which can vary up to seven orders of magnitude between room temperature and 40 K. We demonstrate that it is possible to operate the FBK near-ultraviolet high density SiPMs at temperatures lower than 100 K with a dark rate below 0.01 cps/mm(2) and total correlated noise probability below 35% at an overvoltage of 6 V. These results are relevant for the development of future cryogenic particle detectors using SiPMs as photosensors.
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