4.6 Article

Low-Frequency Noise Performance of Al-Doped ZnO Nanorod Photosensors by a Low-Temperature Hydrothermal Method

Journal

IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 8, Pages 3206-3212

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2706320

Keywords

Aluminum; hydrothermal; low-frequency noise; photodetector (PD); ZnO nanorods (NRs)

Funding

  1. Ministry of Science and Technology of Taiwan [MOST 104-2221-E-168-011-MY3, MOST 105-2221-E-006-123, MOST 106-2623-E-006-011-D]

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In this paper, we developed a simple hydrothermal method to synthesize vertically aligned ZnO:Al nanorods (NRs) to fabricate a UV photodetector (PD) on a seed layer/glass substrate. The photo-to-dark current ratio of the ZnO: Al NR PD was approximately 1.4 x 10(3) under 1-V bias and UV light irradiation (380 nm). The calculated responsivity of the fabricated PD was 181 A . W-1, and the UV-to-visible rejection ratio of the PD at 1-V applied bias was 1.51 x 10(3). In addition, flicker noise dominated the noise of the ZnO: Al NR PD. The noise-equivalent power and normalized detectivity of the ZnO:Al NR PD were 1.17 x 10(-11) W and 4.03 x 10(12) cm . Hz(0.5)W(-1), respectively.

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