Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 8, Pages 3189-3192Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2717444
Keywords
Bending stress; electro-thermal annealing (ETA); flexible In-Ga-Zn-O (a-IGZO) thin-film transistors (TFT); low-temperature process
Funding
- MOTIE/KEIT [10042412]
- Center for Integrated Smart Sensors - Ministry of Science, ICT and Future Planning [CISS-2011-0031848]
- National Research Foundation of Korea - Ministry of Science, ICT and Future Planning [2016M3A7B4905609]
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Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) fabricated by low-temperature processes on a flexible substrate can easily be degraded by mechanical deformation. Furthermore, lower performance in terms of the initial characteristics and reliability levels compared to those fabricated on glass substrates with relatively high heat treatments is inevitable. To solve these problems, a local electro-thermal annealing (ETA) method was applied to flexible a-IGZO TFTs processed at low temperature to enhance the inferior initial characteristics and reliability under a bending state. The enhancement of the characteristics and reliability by ETA can be attributed to the reduction of defects related to the oxygen through a localized Joule heat treatment with an extremely short duration (similar to 1 ms). In addition, the effectiveness of ETA to recovery from bending stress even under harsh cyclic bending operation (strain condition of 0.833%) is verified.
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