Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 9, Pages 3678-3682Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2724599
Keywords
Al/AZO composite layers; GaN LED; light output power (LOP); mapping images; transparent conductive layer (TCL)
Funding
- National Science Council of the Republic of China [NSC 103-2221-E-006-244-MY3]
- Advanced Optoelectronic Technology Center, National Cheng Kung University
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A new and simple Al/aluminum-doped zinc oxide (AZO) composite structure is proposed to act as a transparent conductive layer (TCL) for GaN-based LEDs. The Al/AZO composite layers effectively improve the current spreading performance, compared with an AZO TCL. Experimentally, the specific contact resistance of the studied Al/AZO LED is reduced by about 27.6%, compared with an AZO LED. In addition, under an operating current of 20 mA, the forward voltage and light output power (LOP) of the studied Al/AZO LED are decreased by 0.15 V and increased by 19.5%, respectively. Uniform and enhanced intensities are also found in light emission mapping images of the studied Al/AZO LED. Consequently, based on benefits including simple structure and improved electrical and optical properties, the studied Al/AZO TCL is suitable for GaN-based LED applications.
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