Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 64, Issue 12, Pages 4831-4837Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2017.2761885
Keywords
Gate-stack; germanium; metal source/drain (S/D); metal-oxide-semiconductor field-effect transistor (MOSFET)
Funding
- National Natural Science Foundation of China [61306097]
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The high performance Ge pMOSFETs have been realizedwith ultrathin HfO2/AlOx/GeOx/Ge gate-stacks fabricated by ozone postoxidation (OPO) and NiGe metal source/drain (S/D). It is found that OPO yields a reduction of interface traps and an improvement of dielectric strength for the HfO2/AlOx/GeOx/Ge gate-stacks. On the other hand, it is also confirmed that the NiGe metal S/D structure decreases the S/D parasitic resistance severely. As a result, the record high drive current has been realized under a comparable gate length for present Ge pMOSFET structure with the ultrathin equivalentoxide thicknessHfO(2)/AlOx/GeOx/Ge gate-stack and the low parasitic resistance NiGe S/D.
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