Journal
CRYSTAL RESEARCH AND TECHNOLOGY
Volume 50, Issue 9-10, Pages 695-699Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/crat.201400436
Keywords
exfoliation; tin disulfide; semiconductor
Categories
Funding
- National Science Centre, Poland [2011/03/B/ST5/02731]
Ask authors/readers for more resources
Efficient and inexpensive method of chemical transport based on Ag2S catalyst was used to produce relatively large crystals of SnS2, up to 5 mm in linear size. Good quality of the obtained layered crystals of SnS2 was confirmed by X-ray, SEM, EDX and Raman measurements, however the layers appeared to be slightly twisted in relation to each other. Nanometric (down to c.a. 10 nm) layers of SnS2 on a Si substrate were obtained by mechanical exfoliation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available