4.7 Article

Semi-transparent quaternary oxynitride photoanodes on GaN underlayers

Journal

CHEMICAL COMMUNICATIONS
Volume 56, Issue 86, Pages 13193-13196

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d0cc04894a

Keywords

-

Funding

  1. Vinnova [C1Bio 2019-03174]
  2. U.S. DOE, Office of Science, Office of Basic Energy Sciences [DE-SC0020301]
  3. China Scholarship Council
  4. EU Regional Development Fund [POIG.02.01.00-12-023/08]
  5. U.S. Department of Energy (DOE) [DE-SC0020301] Funding Source: U.S. Department of Energy (DOE)

Ask authors/readers for more resources

Conformal atomic layer deposition (ALD) technique is employed to make semi-transparent TaOxNy, providing the possibility to build semi-transparent oxy(nitride) heterojunction photoanodes on conductive substrates. A generalized approach was developed to manufacture semi-transparent quaternary metal oxynitrides on conductive substrates beyond semi-transparent binary Ta3N5 photoanodes aiming for wireless tandem photoelectrochemical (PEC) cells.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available