4.6 Article

Performance Enhanced Light-Emitting Diodes Fabricated from Nanocrystalline CsPbBr3 with In Situ Zn2+ Addition

Journal

ACS APPLIED ELECTRONIC MATERIALS
Volume 2, Issue 12, Pages 4002-4011

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.0c00827

Keywords

all-inorganic perovskite nanocrystals; in situ surface passivation; light-emitting diodes; zero-dimensional perovskite; room-temperature synthesis; solid-state NMR

Funding

  1. Presidential Postdoctoral Fellowship from Nanyang Technological University (NTU), Singapore [04INS000581C15000E01]
  2. Singapore National Research Foundation, Prime Minister's Office, through the Competitive Research Program [NRF-CRP14-2014-03]
  3. EPSRC [EP/M028186/1, EP/K024418/1]
  4. University of Warwick
  5. Birmingham Science City
  6. Advantage West Midlands (AWM)
  7. European Regional Development Fund (ERDF)
  8. Faculty of Engineering and Physical Sciences at University of Southampton

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Inorganic cesium lead halide perovskite nanocrystals are promising materials for optoelectronic applications as they exhibit high thermal stability alongside precise color tunability and high color purity; however, their optical properties are degraded by surface defects. This work demonstrates a room temperature synthesis of CsPbBr3 nanocrystals facilitating in situ surface passivation via the incorporation of Zn2+ cations. The facile incorporation ZnBr2+ into the precursor solution facilitates Zn2+ and Br- substitution into the nanocrystal surface/subsurface layers to induce passivation of existing Pb2+ and Br- vacancies and increase the photoluminescence quantum yield from similar to 48 to 86%. The XPS and solid-state H-1 MAS NMR techniques show that the key modification is a reduction of the octylamine:oleic acid ratio leading to a near-neutral surface charge; this is accompanied by the appearance of larger nanosheets and nanowires observed by quantitative powder XRD and HR-TEM. The suitability of these perovskite nanocrystals for electrically driven applications was confirmed by the fabrication of light-emitting diodes, which demonstrate that the in situ Zn2+ passivation strategy enhanced the external quantum efficiency by similar to 60%.

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