Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 52, Issue 11, Pages 3043-3055Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2017.2734901
Keywords
mm-sized implant; on-chip coil; pulse-frequency modulation; pulse-width modulation (PWM); regulating rectifier; wireless power transfer (WPT)
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Funding
- University of California (UC) Multicampus Research Programs and Initiatives
- DARPA NESD Program
- UC San Diego Center for Brain Activity Mapping
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This paper presents a fully integrated resonant regulating rectifier (IR3) with an on-chip coil used to wirelessly power mm-sized implants. By combining rectification and regulation in a single stage, and controlling this stage via a hybrid pulse-width modulation and pulse-frequency modulation (PFM) feedback scheme, the IR3 avoids efficiencylimiting cascaded losses while enabling tight voltage regulation with low dropout and ripple. The IR3 is implemented in 0.078 mm(2) of active area in 180-nm Silicon oxide insulator (SOI) CMOS, and achieves a 1.87% Delta V-DD/V-DD power supply regulation ratio with a 1-nF decoupling capacitor despite a tenfold load current variation from 8 to 80 mu A. A 0.8-V V-DD is maintained at a 8-k Omega load for 144-MHz RF inputs ranging from 0.98 to 1.5 V. At 1-V regulation, the voltage conversion efficiency is greater than 92% with less than 5.2-mVpp ripple, while the power conversion efficiency is 54%. The measured overall wireless power transfer system efficiency, from the primary coil to VDD output of the IR3, is 2% at 160-mu W load, and reaches 5% at 700 mu W.
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