Journal
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 52, Issue 5, Pages 1443-1449Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2017.2654326
Keywords
Internet of things (IoT); low power; subthreshold; voltage reference
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Funding
- Direct For Computer & Info Scie & Enginr [1111541] Funding Source: National Science Foundation
- Division Of Computer and Network Systems [1111541] Funding Source: National Science Foundation
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This paper presents a subthreshold voltage reference in which the output voltage is scalable depending on the number of stacked PMOS transistors. A key advantage is that its output voltage can be higher than that obtained with conventional low-power subthreshold voltage references. The proposed reference uses native NMOS transistors as a current source and develops a reference voltage by stacking one or more PMOS transistors. The temperature coefficient of the reference voltage is compensated by setting the size ratio of the native NMOS and stacked pMOS transistors to cancel temperature dependence of transistor threshold voltage and thermal voltage. Also, the transistor size is determined considering the trade-off between diode current between n-well and p-sub and process variation. Prototype chips are fabricated in a 0.18-mu m CMOS process. Measurement results from three wafers show 3 sigma inaccuracy of +/- 1.0% from 0 degrees C to 100 degrees C after a single room-temperature trim. The proposed voltage reference achieves a line sensitivity of 0.31%/V and a power supply rejection of -41 dB while consuming 35 pW from 1.4 V at room temperature.
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