Journal
ACTA CHIMICA SINICA
Volume 78, Issue 12, Pages 1287-1296Publisher
SCIENCE PRESS
DOI: 10.6023/A20080342
Keywords
Lewis base anions; n-doping; anion-pi interaction; interfacial materials; dopant
Categories
Funding
- National Natural Science Foundation of China [21722404, 21674093]
- Zhejiang Natural Science Fund for Distinguished Young Scholars [LR17E030001]
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Doping is an effective method to improve the carrier densities and charge transport capabilities of organic semiconductors. In recent years, n-doping of organic semiconductors via Lewis base anions has attracted much attentions of researchers, which takes place under mild condition and controllable fashion, hence exhibiting broad applications in optoelectronics. This perspective focuses on discussing the mechanism of anion-induced electron transfer to semiconductors, summarizing its recent progresses in interfacial materials and doped active layers for optoelectronic devices, as well as analyzing the future development of this field.
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