Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 2, Issue 11, Pages 3530-3537Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.0c00569
Keywords
perovskites; light-emitting diodes; PVK; hole transport layer; stability
Funding
- NSFC [51922049]
- National Key Research and Development Program of China [2016YFB0401701]
- Natural Science Foundation of Jiangsu Province [BK20180020]
- Fundamental Research Funds for the Central Universities [30920032102]
- PAPD of Jiangsu Higher Education Institutions
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Metal-halide perovskites have broad application prospects in being emitters for light-emitting diodes (LEDs) on account of their remarkable photoelectric performance. Nevertheless, exciton quenching induced by the poor quality of perovskite films and mismatched energy levels between the perovskite layer and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) restricts device performance. This study presents poly(9-vinylcarbazole) (PVK) films processed by a polar solvent as the hole transport layer to construct efficient perovskite LEDs (PeLEDs). The perovskite film on PVK exhibited a smoother surface, smaller grain size, and fewer defects, which improved its luminescence properties in comparison to that formed on PEDOT:PSS. Moreover, the lower energy barrier between PVK and the emission layer improved the hole injection. Based on the high luminescence and electrical transport characteristics, the device exhibited improved performance with a peak external quantum efficiency reaching 10.59%. Furthermore, the LEDs showed excellent environmental and operational stability because the hydrophobic PVK shielded the perovskite from atmospheric moisture and restricted interfacial exciton quenching. These results demonstrate that the PVK is an effective hole injection and transport material that can be applied to photodetectors, solar cells, memristors, and similar devices.
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